Figure 1
Device geometry and diagram of experimental set-up.
A false-colour SEM
image of a suspended device (top) and a schematic of device geometry (bottom). Scale
bar, 300 nm. Metal electrodes (gold/chromium) are shown in yellow, and the silicon oxide surface in
grey. The sides of the trench, typically 1.2 to 1.5 microns wide and 500 nm deep, are marked
with dashed lines. A suspended nanotube can be seen bridging the trench (Image and text: Nature 431 284)