International Conference on Extended Defects in Semiconductors

EDS-2012 will be held at the Aristotle University of Thessaloniki, Greece, from June 24 to June 29, 2012. According to the established standards of the series, the conference is a forum about the current state of the art of experimental investigations and modeling of extended defects in semiconductors. Attending scientists - from universities, research institutes and the industry - present contributions aiming at a deeper understanding of the influence of point or extended defects on usage properties of semiconductors for their role in the development of semiconductor technology is of crucial importance. The official language of the conference will be English. The conference will start on Sunday June 24 in the evening (arrivals, registration, welcome) and close on Friday June 29, at lunch time (departure).

Topics & Scientific Interests

The remit of the conference includes extended defects, nanostructures, nanoparticles, quantum dots and interfaces within semiconducting materials ranging from narrow to wide band gaps, graphene-derived materials and diamond as well. Scientific interests range from defect geometry, electronic structure, dynamics, spectroscopy, microscopy, reactions and chemistry to processing and preparation, such as implantation and the production of strained layers and the operation of devices such as integrated circuits, heterostructures, and solar cells.