Researchers in the US and France have shown that the electrical resistance of a magnetic wire just a few atoms thick can be changed in a stepwise manner by varying an applied magnetic field. The result is claimed to be the first experimental verification of "ballistic anisotropic magnetoresistance", which was first predicted in 2005. The breakthrough could someday be exploited to boost the capacity of magnetic data-storage devices (Nature Nanotechnology doi:10.1038/nnano.2007.36).
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