6th International Conference on Nitride Semiconductors (ICNS-6)
The venue continues a series of conferences formerly held in Nagoya/Japan (1995), Tokoshima/Japan (1997), Montpellier/France (1999), Denver/USA (2001) and Nara/Japan (2003). It will cover all aspects of group-III nitride semiconductors. A special focus will be on epitaxial growth (MBE, MOVPE, HVPE etc.), bulk crystal growth, theory, material issues (III-V-N, InN, etc.), defect engineering, structural analysis, optical characterization, nanostructures, and devices (LEDs, laser-diodes, transistors, detectors, etc.).