
Nanowire thickness alters GaAs band structure
Band structure of GaAs nanowires grown for potential photovoltaic applications depends on their thickness
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Lok Yi Lee is a former PhD student contributor to Physics World. Her PhD project at the University of Cambridge focused on making more efficient lighting that is based on light-emitting diodes (LEDs), with the aim to investigate the use of gallium nitride in the cubic zincblende crystal structure for green LEDs. She used an atomic force microscope to map the surface of samples, and a transmission electron microscope to reveal nanometre-scale defects in the crystalline samples.
Band structure of GaAs nanowires grown for potential photovoltaic applications depends on their thickness
Caltech researchers capture nanosecond frames during eutectic transformation with 4D electron microscopy
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