
Nanowire thickness alters GaAs band structure
Band structure of GaAs nanowires grown for potential photovoltaic applications depends on their thickness
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Lok Yi Lee is a PhD student contributor to Physics World. Her PhD project at the University of Cambridge is focused on making more efficient lighting that is based on light-emitting diodes (LEDs). The aim of her project is to investigate the use of gallium nitride in the cubic zincblende crystal structure for green LEDs. She uses an atomic force microscope to map the surface of samples, and a transmission electron microscope to reveal nanometre-scale defects in the crystalline samples.
As a student contributor, she hopes to play a part in breaking down walls between different fields of science through accessible and bite-size articles.
Band structure of GaAs nanowires grown for potential photovoltaic applications depends on their thickness
Caltech researchers capture nanosecond frames during eutectic transformation with 4D electron microscopy
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